To account for the growing storage needs in mobile, Samsung has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next generation smartphones and tablets.
Samsung is utilizing their own 64-layer 512-gigabit (Gb) V-NAND chips for these, which will give you speedy copy and write speeds even at this size.
Consisting of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together, Samsung's new 512GB UFS doubles the density of Samsung's previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.
Store approximately 130 4K Ultra HD (3840 × 2160) video clips of a 10-minute duration (10x increase over 64GB eUFS storage).
As noted, Samsung has not confirmed whether this new chip will be used on the upcoming Galaxy S9 or even the Galaxy Note 9 that is expected to be here in H2 2018. Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for United States variants). Samsung is also using a bunch of new technologies to increase performance and energy efficiency.
It was nearly two years ago that Samsung announced that it was kicking off mass-production of 256GB storage chips implementing the Universal Flash Storage (UFS) 2.0 interface boasting speeds of up to 850MB/s for sequential reads and 260MB/s for writes. Claimed sequential read and write speeds of up to 860 megabytes per second (MBps) and 255MBps respectively mean that bigger, high-resolution files can be transferred in lesser time than before.
They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations.